HiSIM2 selected as the new standard for MOS transistor model

The Japan Semiconductor Research Center (STARC) announced that its MOS transistor model for circuit simulation "HiSIM2: Hiroshima-university STARC IGFET Model 2" developed in cooperation with the Miura Research Laboratory of Hiroshima University has become an international standard. At the meeting held in San Francisco, USA, on March 31st and April 1st, 2011, the International Standardization Organization "Compact Model Council: CMC" for circuit simulation transistor models selected HiSIM2 as the CMC standard model for Bulk substrate MOS transistors.

HiSIM2 is a potential mode transistor type in which the potential distribution from the source to the drain of the MOS transistor is taken into consideration. Compared with a threshold voltage model in which a transistor such as the BSIM developed in the 1990s treats the interior of a transistor as a black box, the action of the transistor can be more accurately handled. Both BSIM3 and BSIM4 were selected as CMC standard models in the 1990s. However, with the development of miniaturization, problems in accuracy and processing time (convergence) were highlighted. Therefore, the CMC decided to recruit a new generation model that replaced BSIM.

In addition to excellent accuracy and convergence, HiSIM2 also features modularity. Therefore, it is easy to develop an extension model such as HiSIM_HV. HiSIM_HV was developed by adding a drift-side model next to the Bulk MOS transistor model controlled by HiSIM2. In addition, the "HiSIM-IGBT" was developed by adding the BJT model to HiSIM_HV. HiSIM-IGBT was developed by Toyota Central Research Institute and Toyota Motor Corporation in cooperation with Hiroshima University.

In addition, according to STARC, the development of HiSIM2 and HiSIM_HV was funded by the Japan's independent administrative agency New Energy Industry Technology Development Agency (NEDO), thereby accelerating standardization.

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