The device technology of a power amplifier is always about how to increase the RF power density and gain of a transistor at the same or higher speeds. The increase in power density and gain reduces the gain progression and resultant losses and ultimately limits the raw power, gain, and efficiency that the chip can provide at a given frequency.
The ever-increasing power density has driven the transfer of technology from silicon to standard gallium arsenide, to high-pressure gallium arsenide, and finally to gallium nitride.
As technology moves to high power density FET technology, temperature management issues for devices are increasing. It is important to ensure that the device is "cool" because high temperatures cause degradation in the original performance and reliability of the device. In theory, gallium nitride can provide a power density of more than 20 W/mm at relatively high frequencies. However, in practice, the use of gallium nitride is limited to 5 W/mm or less due to the high heat generation in a very compact space.
The thermal design challenge is the ultimate cause of SiC becoming the substrate of choice for high performance RF applications. The thermal conductivity of silicon carbide is just as important as the high RF power of gallium nitride. It is for this reason that companies such as Qorvo have begun to study substrate materials with better thermal properties such as diamonds.
To manage today's thermal designs, circuit designers let heat spread across the semiconductor surface, increasing the distance between device cells or shrinking device cells. However, thermal design is not just at the chip level. Package engineering personnel must also help because the heat flux of the chip package interface is also high. To ensure that the GaN device provides maximum RF power density, a good thermal interface between the chip and the package is extremely important.
In GaN technology, thermal design is as important as electrical design. 
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